the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sJ649 switching p-channel power mos fet data sheet document no. d16332ej1v0ds00 (1st edition) date published may 2003 ns cp(k) printed in japan 2002 description the 2sJ649 is p-channel mos field effect transistor designed for solenoid, motor and lamp driver. features ? low on-state resistance: r ds(on)1 = 48 m ? max. (v gs = ?10 v, i d = ?10 a) r ds(on)2 = 75 m ? max. (v gs = ?4.0 v, i d = ?10 a) ? low input capacitance: c iss = 1900 pf typ. (v ds = ?10 v, v gs = 0 v) ? built-in gate protection diode absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss ?60 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) (t c = 25c) i d(dc) m 20 a drain current (pulse) note1 i d(pulse) m 70 a total power dissipation (t c = 25c) p t 25 w total power dissipation (t a = 25c) p t 2.0 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c single avalanche current note2 i as ?20 a single avalanche energy note2 e as 40 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25c, v dd = ?30 v, r g = 25 ? , v gs = ?20 0 v ordering information part number package 2sJ649 isolated to-220 (isolated to-220) free datasheet http://www..net/
data sheet d16332ej1v0ds 2 2sJ649 electrical characteristics (t a = 25c) characteristics symbol test condtions min. typ. max. unit zero gate voltage drain current i dss v ds = ?60 v, v gs = 0 v ? 10 a gate leakage current i gss v gs = m 20 v, v ds = 0 v m 10 a gate cut-off voltage v gs(off) v ds = ?10 v, i d = ?1 ma ?1.5 ?2.0 ?2.5 v forward transfer admittance note | y fs |v ds = ?10 v, i d = ?10 a 10 20 s r ds(on)1 v gs = ?10 v, i d = ?10 a 38 48 m ? drain to source on-state resistance note r ds(on)2 v gs = ?4.0 v, i d = ?10 a 47 75 m ? input capacitance c iss v ds = ?10 v 1900 pf output capacitance c oss v gs = 0 v 350 pf reverse transfer capacitance c rss f = 1 mhz 140 pf turn-on delay time t d(on) v dd = ?30 v, i d = ?10 a 10 ns rise time t r v gs = ?10 v 10 ns turn-off delay time t d(off) r g = 0 ? 73 ns fall time t f 17 ns total gate charge q g v dd = ?48 v 38 nc gate to source charge q gs v gs = ?10 v 7 nc gate to drain charge q gd i d = ?20 a 10 nc body diode forward voltage note v f(s-d) i f = 20 a, v gs = 0 v 0.95 v reverse recovery time t rr i f = 20 a, v gs = 0 v 49 ns reverse recovery charge q rr di/dt = 100 a/ s 100 nc note pulsed: pw 350 s, duty cycle 2% test circuit 1 avalanche capability r g = 25 ? 50 ? pg l v dd v gs = ?20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% 10% 0 v ds ( ? ) 90% 90% t d(on) t r t d(off) t f 10% v ds 0 t on t off pg. 50 ? d.u.t. r l v dd i g = ? 2 ma ? v gs free datasheet http://www..net/
data sheet d16332ej1v0ds 3 2sJ649 typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a - 0.1 - 1 - 10 - 100 - 0.1 - 1 - 10 - 100 r ds(on) limited (at v gs = ? 10 v) 10 ms dc 1 ms pw = 100 s i d(pulse) i d(dc) single pulse t c = 25 c v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 r th(ch-c) = 5.0 c/ w r th(ch-a) = 62.5 c/w single pulse pw - pulse width - s 10 100 1 m 10 m 100 m 1 10 100 1000 free datasheet http://www..net/
data sheet d16332ej1v0ds 4 2sJ649 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 ? 2 ? 3 ? 4 ? 80 ? 60 ? 40 ? 20 0 ? 1 pulsed v gs = ? 10 v ? 5 ? 4.0 v ? 4.5 v v ds - drain to source voltage - v i d - drain current - a pulsed ? 1 ? 2 ? 3 ? 4 ? 5 v ds = ? 10 v ? 10 ? 1 ? 0.1 ? 100 ? 0.01 t a = ? 55 ?c 25 ?c 75 ?c 125 ?c v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v v ds = 10 v i d = 1 ma 1.0 2.0 3.0 50 0 50 100 0 150 4.0 t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.01 0.1 1 10 100 10 100 0.1 1 pulsed v ds = 10 v t a = 125 ? c 75 ? c 25 ? c ? 55 ? c 0.01 i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m ? 1 0.1 120 100 80 60 40 20 0 10 100 pulsed v gs = 4.0 v 4.5 v 10 v i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 0 10 20 30 40 50 60 70 80 0 - 2 - 4 - 6 - 8 - 10 - 12 - 14 - 16 - 18 - 20 pulsed i d = ? 10 a v gs - gate to source voltage - v free datasheet http://www..net/
data sheet d16332ej1v0ds 5 2sJ649 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m ? 0 10 20 30 40 50 60 70 80 90 -75 -50 -25 0 25 50 75 100 125 150 175 pulsed v gs = ? 4.0 v ? 10 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 0.1 1 10 v gs = 0 v f = 1 mhz c oss c rss c iss 100 v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 10 1 1 0.1 100 1000 10 100 t f t r t d(on) t d(off) v dd = 30 v v gs = 10 v r g = 0 ? i d - drain current - a v ds - drain to source voltage ? v 0 - 5 - 10 - 15 - 20 - 25 - 30 - 35 - 40 - 45 - 50 0 5 10 15 20 25 30 35 40 0 - 2 - 4 - 6 - 8 - 10 i d = ? 20 a pulsed v ds v gs v dd = ? 48 v ? 30 v ? 12 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a 1.0 0 1.5 0.5 pulsed 0.01 0.1 1 10 100 0 v v gs = 10 v 4.0 v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0 v 1 0.1 10 1 10 100 1000 100 i f - diode forward current - a free datasheet http://www..net/
data sheet d16332ej1v0ds 6 2sJ649 single avalanche current vs. inductive load single avalanche energy derating factor i as - single avalanche current - a - 1 - 10 - 100 v dd = ? 30 v r g = 25 ? v gs = -20 0 v starting t ch = 25c e as2 = 100 mj e as1 = 40 mj i as1 = ? 20 a i as2 = ? 10 a l - inductive load - h energy derating factor - % 0 20 40 60 80 100 25 50 75 100 125 150 v dd = ? 30 v r g = 25 ? v gs = ? 20 0 v i as ? 20 a starting t ch - starting channel temperature - c 10 100 1 m 10 m free datasheet http://www..net/
data sheet d16332ej1v0ds 7 2sJ649 package drawing (unit: mm) isolated to-220 (mp-45f) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 2.5 0.1 0.65 0.1 1.5 0.2 2.54 1.3 0.2 2.54 0.7 0.1 4 0.2 15.0 0.3 12.0 0.2 3 0.1 123 1.gate 2.drain 3.source 13.5 min. equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. free datasheet http://www..net/
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